The present invention provides a solid electrolyte switching device, which
can maintain an on or off state when the power source is removed, the
resistance of which in on the state is low, and which is capable of
integration and re-programming, and FPGA and a memory device using the
same, and a method of manufacturing the same.A solid electrolyte
switching device (10, 10', 20, 20') comprises a substrate (11) in which
surface is coated with an insulation layer, a first interconnection layer
(13) set on said substrate (11), an ion supplying layer (17) set on said
first interconnection layer (13), a solid electrolyte layer (16) set on
said ion supplying layer (17), an interlevel insulating layer (12) having
a via hole set to cover said first interconnection layer (13), said ion
supplying layer (17), and said solid electrolyte layer (16), a counter
electrode layer (15) set to contact said solid electrolyte layer (16)
through the via hole of said interlevel insulating layer (12), and a
second interconnection layer (14) set to cover said counter electrode
layer (15). The switching device can be provided in which the on state,
or the off state can be arbitrarily set by the threshold voltage applied
between the ion supplying layer (17) and the counter electrode layer
(15), which is non-volatile, and the resistance of which in the on state
is low. The switching device of the present invention is also simple and
fine in structure, and hence makes it possible to provide smaller
switching devices than are currently available. Further, using the
switching device of the present invention as the switching device of an
FPGA (30) makes it possible to provide re-programmable and fast operation
FPGA (30). Using the switching device of the present invention as a
memory cell of a memory device makes it possible to provide a
non-volatile memory device with high programming and reading speed.