Disclosed is a small-sized, power-saving and high-performance semiconductor integrated circuit that comprises first and second transistors formed on a substrate, wherein the gate electrode in the first transistor is of crystalline silicon, and the gate electrode in the second transistor is of a combination of crystalline silicon and a substance having a higher electric conductivity than said crystalline silicon as provided on at least a part of said crystalline silicon. In the circuit, the gate electrode in the first transistor is required to be patterned in fine patterns, while that in the second transistor is required to have low electric resistance. Such different types of gate electrodes are formed on one and the same substrate in a simple process. The elements constituting the circuit all have high quality.