A method of fabricating a ferroelectric memory transistor includes preparing a substrate, including isolating an active region; forming a gate region; depositing an electrode plug in the gate region; depositing an oxide side wall about the electrode plug; implanting ions to form a source region and a drain region; annealing the structure to diffuse the implanted ions; depositing an intermediate oxide layer over the structure; removing the electrode plug; depositing a bottom electrode in place of the electrode plug; depositing a ferroelectric layer over the bottom electrode; depositing a top electrode over the ferroelectric layer; depositing a protective layer; depositing a passivation oxide layer over the structure; and metallizing the structure.