An MTJ memory cell includes a magnetic tunnel junction part having a resistance value varying with the level of stored data and an access transistor. The gate of the access transistor is connected with a read word line. A bit line is not directly connected with the magnetic tunnel junction part but electrically connected with the magnetic tunnel junction part through the access transistor. The magnetic tunnel junction part is connected between a write word line and the access transistor. In data reading, the voltage of the write word line is set to a ground voltage, for forming a current path for the data reading.