An MRAM device (200) and method of manufacturing thereof having second conductive lines (228) with a narrow width. The second conductive lines (228) partially contact the resistive memory elements (214), reducing leakage currents in neighboring cells (214).

 
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< Consolidation method of junction contact etch for below 150 nanometer deep trench-based DRAM devices

< Magnetoresistive device and magnetic component

> Thin film magnetic memory device capable of reducing number of wires and reading data at high speed

> Multibit magnetic memory element
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