A one-time programmable memory cell includes a fuse and an anti-fuse in series. The memory cell has two states, an initial state and a written (programmed) state. In the initial state, a resistance of the cell is finite, typically dominated by the relatively high resistance of the anti-fuse. In the written state, the resistance is infinite because the breakdown of the fuse resulting in an open circuit. The cell may be programmed by applying a critical voltage across the cell generating a critical current to cause the fuse to become open. When critical voltage is applied, this generally causes the anti-fuse to break down, which in turn causes a pulse of high current to be applied to the fuse. The states are detected by applying a read voltage across the memory cell. If the memory has not been programmed, then a measurable amount flows. Otherwise, no current flows.

Una célula de memoria programable de una sola vez incluye un fusible y contra-fu'ndase en serie. La célula de memoria tiene dos estados, un estado inicial y un estado (programado) escrito. En el estado inicial, una resistencia de la célula es finita, dominado típicamente por la resistencia relativamente alta del contra-se funde. En el estado escrito, la resistencia es infinita porque la interrupción del fusible dando por resultado un circuito abierto. La célula puede ser programada aplicando un voltaje crítico a través de la célula que genera una corriente crítica para hacer el fusible llegar a estar abierto. Cuando se aplica el voltaje crítico, éste causa generalmente contra-se funde analiza, que alternadamente hace un pulso de arriba actual ser aplicado al fusible. Los estados son detectados aplicando un voltaje leído a través de la célula de memoria. Si la memoria no se ha programado, entonces una cantidad mensurable fluye. Si no, ningunos flujos de la corriente.

 
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