A semiconductor integrated circuit device comprises a plurality of magnetic tunneling junction elements, a writing word line which provides an auxiliary magnetic field for writing data to the plurality of magnetic tunneling junction elements, a plurality of bit lines connected to ones of ends of the respective plurality of magnetic tunneling junction elements, and a cell selecting transistor. The cell selecting transistor is commonly connected to other ends of the respective plurality of magnetic tunneling junction elements.

Um dispositivo do circuito integrado do semicondutor compreende um plurality de elementos magnéticos da junção tunneling, uma linha da palavra da escrita que forneça um campo magnético auxiliar para dados da escrita ao plurality de elementos magnéticos da junção tunneling, a um plurality das linhas do bocado conectadas a uma dos fins do plurality respectivo de elementos magnéticos da junção tunneling, e a uma pilha que seleciona o transistor. A pilha que seleciona o transistor é conectada geralmente a outros fins do plurality respectivo de elementos magnéticos da junção tunneling.

 
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< Manufacturing method of magnetic memory device

< Select line architecture for magnetic random access memories

> Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having equi-potential isolation

> Memory having write current ramp rate control

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