This invention provides a transparent Cu--Al--O semi-conducting film having
a p-type conductivity greater than 0.95.times.10.sup.-1
S.multidot.cm.sup.-1. This invention also relates to a process for
preparing a Cu--Al--O film having p-type conductivity, comprising: a)
controllably vaporizing organo-copper and organo-aluminum precursors and
carrying the vapors into a chemical vapor deposition chamber with an inert
gas flow; b)reacting and depositing the vapors on a substrate, preferably
a light-transmitting substrate, through a chemical vapor deposition
process.
