A lower multi-layer mirror is disposed on a substrate made of a first
semiconductor having a first lattice constant. The lower multi-layer
mirror has a lamination structure that a first layer made of an oxide of a
second semiconductor and a second layer made of a third semiconductor are
alternately stacked. A strain-relaxation layer is disposed on the lower
multi-layer mirror, the strain-relaxation layer being made of a fourth
semiconductor having a second lattice constant different from the first
lattice constant. An active layer is disposed on the strain-relaxation
layer. The active layer including a luminescence region is made of a fifth
semiconductor having a third lattice constant different from the first and
second lattice constants. An upper multi-layer mirror is disposed on the
active layer. A surface-emitting semiconductor laser is provided which has
a high efficiency and a low heat resistance.
