A tunneling magneto-resistance element forming an MTJ memory cell is
connected between a bit line and a strap. In each memory cell column, the
strap is shared by the plurality of tunneling magneto-resistance elements
in the same row block. The access transistor is connected between strap
and ground voltage, and is turned on/off in response to a corresponding
word line. Storage data is read from the selected memory cell based on a
comparison between results of data reading effected on a memory cell group
coupled to the same strap before and after application of a predetermined
magnetic field to the selected memory cell.
