A high voltage insulated gate field-effect transistor includes an insulated
gate field-effect device structure having a source and a drain, the drain
being formed with an extended well region having one or more buried layers
of opposite conduction type sandwiched therein. The one or more buried
layers create an associated plurality of parallel JFET conduction channels
in the extended portion of the well region. The parallel JFET conduction
channels provide the HVFET with a low on-state resistance.
