A photoresist composition is provided that includes a polymer having at
least one acrylate or methacrylate monomer having a formula:
##STR1##
where R.sup.1 represents hydrogen (H), a linear or branched alkyl group of
1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl
group of 1 to 20 carbons; and where R.sup.2 represents an unsubstituted
aliphatic group or a substituted aliphatic group having zero or one
trifluoromethyl (CF.sub.3) group attached to each carbon of the
substituted aliphatic group, or a substituted or unsubstituted aromatic
group; and where R.sup.3 represents hydrogen (H), methyl (CH.sub.3),
trifluoromethyl (CF.sub.3), difluoromethyl (CHF.sub.2), fluoromethyl
(CH.sub.2 F), or a semi- or perfluorinated aliphatic chain; and where
R.sup.4 represents trifluoromethyl (CF.sub.3), difluoromethyl (CHF.sub.2),
fluoromethyl (CH.sub.2 F), or a semi- or perfluorinated substituted or
unsubstituted aliphatic group. A method of patterning a substrate using
the photoresist composition is also provided herein.
