A method of fabricating a non-volatile memory is provided. A longitudinal
strip of stacked layer is formed over a substrate. The longitudinal strip
is a stacked layer including a gate dielectric layer, a conductive layer
and a cap layer. A buried bit line is formed in the substrate on each side
of the longitudinal strip. The longitudinal strip is patterned to form a
plurality of stacked blocks. Thereafter, a dielectric layer is formed over
the substrate. The dielectric layer exposes the cap layer of the stacked
blocks. Some cap layers of the stacked blocks are removed to expose the
conductive layer underneath. A word line is formed over the dielectric
layer to connect stacked blocks in the same row serially together.
