One sub-data circuit is disposed for one selected bit line in a 4-level
memory. The sub-data circuit has first and second latch circuits for
serial accessing. In reading, an upper bit is latched through a sense
latch in the first latch circuit. A reading operation of a lower bit is
controlled to a value of the upper bit latched in the first latch circuit.
In programming, an upper bit is latched in the first latch circuit. A
program operation of a lower bit is controlled to a value of the upper bit
latched in the first latch circuit.