Methods and systems for monitoring semiconductor fabrication processes are
provided. A system may include a stage configured to support a specimen
and coupled to a measurement device. The measurement device may include an
illumination system and a detection system. The illumination system and
the detection system may be configured such that the system may be
configured to determine multiple properties of the specimen. For example,
the system may be configured to determine multiple properties of a
specimen including, but not limited to, a characteristic of a specimen
prior to, during, or subsequent to ion implantation. In this manner, a
measurement device may perform multiple optical and/or non-optical
metrology and/or inspection techniques.
