There are provided a semiconductor light emitting device wherein the
variation in tone in each device is small and the variation in tone due to
deterioration with age is also small, and a method for manufacturing the
same. The semiconductor light emitting device includes an active layer for
emitting primary light having a first wavelength by current injection, and
a light emitting layer excited by the primary light for emitting secondary
light having a second wavelength different from said first wavelength,
wherein the primary light and the secondary light are mixed to be
outputted.
