A method for forming a composite dielectric layer within a microelectronic
product provides a first dielectric layer formed over a substrate of a
fluorosilicate glass (FSG) dielectric material deposited employing a high
density plasma chemical vapor deposition (HDP-CVD) method. The method also
provides a second dielectric layer formed over the first dielectric layer
and formed of an undoped silicate glass (USG) dielectric material
deposited employing a HDP-CVD source radio frequency power only method
employing a source radio frequency power of from about 1000 to about 5000
watts absent a bias power. The composite dielectric layer is formed with
inhibited cracking.
