A p-n junction-type compound semiconductor light-emitting device having a
substrate formed of a single crystal, a first barrier layer provided on
the substrate and formed of a compound semiconductor of a first conduction
type, a light-emitting layer provided on the first barrier layer and
formed of an indium (In)-containing group III nitride semiconductor of a
first or a second conduction type, and an evaporation-preventing layer
provided on the light-emitting layer for preventing the evaporation of
indium from the light-emitting layer. The evaporation-preventing layer is
formed of an undoped boron phosphide (BP)-base semiconductor of a second
conduction type. A method for producing the semiconductor-light emitting
device is also disclosed.
