A method of manufacturing a semiconductor apparatus includes the step (a)
to the step (f). In the step (a), an insulation film is formed on a
semiconductor substrate. In the step (b), a wiring trench is formed which
extends to the insulation film. In the step (c), a first conductive film
is formed which covers an inner surface of the wiring trench and covers
the insulation film. In the step (d), a second conductive film is formed
which fills the wiring trench and covers the first conductive film. In the
step (e), the second conductive film is removed by chemical mechanical
polishing (CMP) until a surface of the first conductive film is exposed.
In the step (f), a surface of the second conductive film is polished by
using a first solution such that a first protective film for protecting
the second conductive film is formed. In the step (g), the first
conductive film and the second conductive film is removed by CMP until a
surface of the insulation film is exposed.
