A method for manufacturing carbon/silicon-carbide composite by a `One-shot`
process including carbonization, heat processing, infiltration, and
forming an anti-oxidation layer on surface is provided through the steps
of: 1) hardening a stacked carbon/phenolic preform; 2) carbonization and
heat processing the preform until the temperature reaches at 2300.degree.
C.; 3) infiltrating and sintering the liquid metal silicon within the
temperature of 1400.about.1800.degree. C.; and 4) inducting a compound
including SiO.sub.2 to gas phase and heat processing it while forming an
anti-oxidation layer on the surface within temperature range of
2000.degree. C..about.2700.degree. C. (desirably, in the range of higher
than 2300.degree. C., and more desirably, at the temperature near
2500.degree. C.). Herein, the carbonization, heat processing, and
ultra-high heat processing might be performed at the same time in the step
2) and the step 4) might not be performed.
