Antifuse with electrostatic assist

   
   

A structure and method for providing an antifuse which is closed by laser energy with an electrostatic assist. Two or more metal segments are formed over a semiconductor structure with an air gap or a porous dielectric between the metal segments. Pulsed laser energy is applied to one or more of the metal segments while a voltage potential is applied between the metal segments to create an electrostatic field. The pulsed laser energy softens the metal segment, and the electrostatic field causes the metal segments to move into contact with each other. The electrostatic field reduces the amount of laser energy which must be applied to the semiconductor structure to close the antifuse.

Una estructura y un método para proporcionar un antifuse que es cerrado por energía del laser con una ayuda electrostática. Dos o más segmentos del metal se forman sobre una estructura del semiconductor con un boquete de aire o un dieléctrico poroso entre los segmentos del metal. La energía pulsada del laser se aplica a uno o más de los segmentos del metal mientras que un potencial del voltaje se aplica entre los segmentos del metal de crear un campo electrostático. La energía pulsada del laser ablanda el segmento del metal, y el campo electrostático hace los segmentos del metal moverse en contacto con uno a. El campo electrostático reduce la cantidad de energía del laser que se debe aplicar a la estructura del semiconductor al cierre el antifuse.

 
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