The present invention relates to a fabrication method of nitride-based
semiconductors and a nitride-based semiconductor fabricated thereby. In
the fabrication method of the invention, a self-organizing metal layer is
formed on a sapphire substrate. The sapphire substrate having the
self-organizing metal layer is heated so that self-organizing metal
coalesces into nanoscale clusters to irregularly expose an upper surface
of the sapphire substrate. Exposed portions of the sapphire substrate is
plasma etched using the self-organized metal clusters as a mask to form a
nanoscale uneven structure on the sapphire substrate. A resultant
structure is wet etched to remove the self-organized metal clusters. The
nanoscale uneven structure formed on the sapphire substrate decreases the
stress and resultant dislocation between the sapphire substrate and a
nitride-based semiconductor layer as well as increases the quantum
efficiency between the same.
