The present invention is an inverted III-nitride light-emitting device
(LED) with enhanced total light generating capability. A large area device
has an n-electrode that interposes the p-electrode metallization to
provide low series resistance. The p-electrode metallization is opaque,
highly reflective, and provides excellent current spreading. The
p-electrode at the peak emission wavelength of the LED active region
absorbs less than 25% of incident light per pass. A submount may be used
to provide electrical and thermal connection between the LED die and the
package. The submount material may be Si to provide electronic
functionality such as voltage-compliance limiting operation. The entire
device, including the LED-submount interface, is designed for low thermal
resistance to allow for high current density operation. Finally, the
device may include a high-refractive-index (n>1.8) superstrate.
