A nonvolatile ferroelectric memory device includes a plurality of top array
blocks disposed along a first direction, each having a plurality of top
sub-cell array blocks disposed along a second direction perpendicular to
the first direction, each of the top sub-cell array blocks include a first
plurality of unit cells, a plurality of bottom array blocks disposed along
the first direction below the plurality of top array blocks, each having a
plurality of bottom sub-cell array blocks disposed along the second
direction, each of the bottom sub-cell array blocks include a second
plurality of unit cells, a plurality of sub-bit lines extending along the
second direction and disposed at equal first intervals along the first
direction, each sub-bit line connected to at least a first end of one of
the first and second pluralities of unit cells, and a plurality of main
bit lines extending along the second direction and disposed at the equal
first intervals along a third direction perpendicular to both the first
and second directions.
