A circuit structure has at least two etching trenches disposed at sidewalls
of a silicon block left behind during the etching of the structure. The
etching trenches are disposed at angles with respect to one another that
are prescribed by the form of the silicon block left behind. Semiconductor
layer structures which can interact with one another diagonally across are
in each case accommodated in the etching trenches. In this case, the
function of the entire circuit structure results from the interaction of
the layer structures disposed in the various etching trenches.
