An image sensor device and method for forming the same include a photodiode
formed in a substrate, at least one electrical interconnection line
electrically associated with the photodiode, a light passageway having a
light inlet, the light passageway being positioned in alignment with the
photodiode, a color filter positioned over the light inlet of the light
passageway and a lens positioned over the color filter in alignment with
the light passageway wherein the at least one electrical interconnection
line includes a copper interconnection formation having a plurality of
interlayer dielectric layers in a stacked configuration with a diffusion
barrier layer between adjacent interlayer dielectric layers, and a barrier
metal layer between the copper interconnection formation and the plurality
of interlayer dielectric layers and intervening diffusion barrier layers.
An image sensor device may employ copper interconnections if a barrier
metal layer is removed from above a photodiode.
