A method of manufacturing a ferroelectric memory device includes a step of forming
a first region (24) having surface characteristics allowing the material
for the members of a ferroelectric capacitor section to be preferentially deposited,
and a second region (26) having surface characteristics allowing the material
for the capacitor section to be less deposited than the first region (24),
and a step of providing the material on the base (10) to form a first electrode
(32), a ferroelectric film (34), and a second electrode (36)
in the first region (24) of the base (10).
