A solid-state image sensing device includes a plurality of pixels. Each pixel
has
a photodiode, a first transistor, and a second transistor. The photodiode is constituted
by a first-conductivity-type semiconductor region and a second-conductivity-type
semiconductor region. The first and second conductivity types are opposite to each
other. The first transistor has a first-conductivity-type drain region formed in
the second-conductivity-type semiconductor region to transfer signal charge to
the drain region. The second transistor has a source region and a drain region
which are formed in the second-conductivity-type semiconductor region and which
have the first conductivity type. At least one second-conductivity-type potential
barrier is provided under the drain region of the first transistor and the source
region and/or the drain region of the second transistor.
