A semiconductor device comprises: a channel region 14 of silicon, a source
region 26 and a drain region 26 respectively forming junction with
the channel region 14, and a gate electrode 30 formed on the channel
region 14 interposing an insulation film 16 therebetween, either
of the source region 26 and the drain region 26 being formed of SiGeC,
which lattice-matches with silicon. Whereby parasitic resistance between the source
region and the drain region can be much decreased.
