A semiconductor device with p-channel MOS transistor having: a gate insulating
film of nitrogen-containing silicon oxide; a gate electrode of boron-containing
silicon; side wall spacers on side walls of the gate electrode, comprising silicon
oxide; an interlayer insulating film having a planarized surface; a wiring trench
and a contact via hole formed in the interlayer insulating film; a copper wiring
pattern including an underlying barrier layer and an upper level copper region,
and filled in the wiring trench; and a silicon carbide layer covering the copper
wiring pattern. A semiconductor device has the transistor structure capable of
suppressing NBTI deterioration.
