The present invention is intended to prevent the deterioration of resolution
due to increase in off-axis aberration resulting from the deviation of a primary
electron bean from the optical axis of a scanning electron microscope. A scanning
electron microscope is provided with an image shifting deflector system including
two deflectors disposed respectively at upper and lower stages. The deflector disposed
at the lower stage is a multipole electrostatic deflecting electrode and is disposed
in an objective. Even if the distance of image shifting is great, an image of a
high resolution can be formed and dimensions can be measured in a high accuracy.
The SEM is able to achieving precision inspection at a high throughput when applied
to inspection in semiconductor device fabricating processes that process a wafer
having a large area and provided with very minute circuit elements.
