A ceramic heater for a semiconductor producing/examining device including a ceramic
substrate having a disc form with a diameter exceeding 200 mm and first and second
surfaces, the first surface being a wafer-holding face and the second surface opposing
to the first surface, the wafer-holding face being such that a semiconductor wafer
is directly put on the wafer-holding face or held apart from the wafer-holding
face by a supporting pin. The wafer-holding face has a surface roughness Rmax of
0.1 to 250 m according to JIS R 0601, and a difference between the surface
roughness of the wafer-holding face and surface roughness of the second surface
is 50% or less.
