In a method of forming a ferroelectric film according to the present invention,
pulsed laser light or pulsed lamp light is applied to an amorphous oxide film formed
over a substrate to form microcrystalline nuclei of oxide in the oxide film. A
light transmission and/or absorption film is formed over the oxide film. Crystallization
of the oxide is performed by applying pulsed laser light or pulsed lamp light from
above the light transmission and/or absorption film to form a ferroelectric film.
