Methods are provided for forming a transistor for use in an active matrix
liquid crystal display (AMLCD). In one aspect a method is provided for processing
a substrate including providing a glass substrate, depositing a conductive seed
layer on a surface of the glass substrate, depositing a resist material on the
conductive seed layer, patterning the resist layer to expose portions of the conductive
seed layer, and depositing a metal layer on the exposed portions of the conductive
seed layer by an electrochemical technique.
