A method of storing and accessing two data bits in a single ferroelectric FET
includes
selectively polarizing two distinct ferroelectric regions in the same gate dielectric
layer separated by a non-ferroelectric dielectric region. A first ferroelectric
region is sandwiched between the substrate and the gate terminal in the region
of the source and is polarized in one of two states to form a first data bit within
the FET. A second ferroelectric region is sandwiched between the substrate and
the gate terminal in the region of the drain and is polarized in one of two states
to form a second data bit within the FET. Detection of the first data bit is accomplished
by selectively applying a read bias to the FET terminals, a first current resulting
when a first state is stored and a second current resulting when a second state
is stored. The polarization of the second data bit is accomplished by reversing
the source and drain voltages.
