A dielectric element capable of effectively suppressing diffusion of oxygen into
a region located under a lower electrode in heat treatment for sintering an oxide-based
dielectric film is obtained. This dielectric element comprises a lower electrode
including a first conductor film having a function of suppressing diffusion of
oxygen, a first dielectric film, formed on the lower electrode, including an oxide-based
dielectric film, and a first insulator film, arranged on a region other than the
lower electrode, having a function of suppressing diffusion of oxygen. Thus, the
first conductor film and the first insulator film function as barrier films preventing
diffusion of oxygen, whereby the first conductor film effectively prevents oxygen
from diffusing downward along grain boundaries of the lower electrode while the
first insulator film effectively prevents oxygen from diffusing downward from the
region other than the lower electrode in heat treatment for sintering the oxide-based
dielectric film.
