A method for fabrication of ferroelectric capacitor elements of an integrated
circuit
includes steps of deposition of an electrically conductive bottom electrode layer,
preferably made of a noble metal. The bottom electrode is covered with a layer
of ferroelectric dielectric material. The ferroelectric dielectric is annealed
with a first anneal prior to depositing a second electrode layer comprising a noble
metal oxide. Deposition of the electrically conductive top electrode layer is followed
by annealing the layer of ferroelectric dielectric material and the top electrode
layer with a second anneal. The first and the second anneal are performed by rapid
thermal annealing.
