A method of making a structure, includes filling a via hole with a conductive
material,
to form a via. The via hole passes through an etch-stop opening. In both directions
along a first axis dielectric material is present between the via hole and edges
of the etch-stop layer, and in both directions along a second axis, perpendicular
to said first axis, dielectric material is not present between the via hole and
edges of the etch-stop layer.
