According to the invention, a Group III nitride compound semiconductor
light-emitting element is provided with a light-emitting layer comprising two layers
of different in ratio of AlGaInN composition, and emitting light with an emission
peak wavelength in an ultraviolet region and light with an emission peak wavelength
in a visible region. The light-emitting element and a fluorescent material excited
by light in the ultraviolet region are combined to configure a light emitting device.
