According to the present invention, there is disclosed a silicon single
crystal wafer grown according to the CZ method which is a wafer having a diameter
of 200 mm or more produced from a single crystal grown at a growth rate of 0.5
mm/min or more without doping except for a dopant for controlling resistance, wherein
neither an octahedral void defect due to vacancies nor a dislocation cluster due
to interstitial silicons exists as a grown-in defect, and a method for producing
it. There can be provided a high quality silicon single crystal wafer having a
large diameter wherein a silicon single crystal in which both of octahedral void
defects and dislocation clusters which are growth defects are substantially eliminated
is grown at higher rate compared with the conventional method by the usual CZ method,
and furthermore by controlling a concentrations of interstitial oxygen in the crystal
to be low, a precipitation amount is lowered and ununiformity of BMD in a plane
of the wafer is improved, and provided a method for producing it.
