A method and system for providing a sinker on a semiconductor device is described.
The method and system includes providing a substrate region and providing a buried
layer and an epitaxial (EPI) layer over the substrate region. The method and system
further includes etching a plurality of device structures in the EPI layer and
providing a slot in the semiconductor substrate that is in contact with the buried
layer and the substrate region. The method and system finally includes oxidizing
the slot except at the bottom of the slot and providing metal within the slot.
