There is provided an apparatus for forming a plurality of silicon-based thin
films on a substrate using a plurality of deposited film forming vessels that can
form silicon-based thin films of higher quality and excellent uniformity by applying
a high frequency power of a first frequency selected from the range between 30
MHz and 500 MHz to a power-applying electrode in a deposited film forming vessel
wherein the distance between the power-supplying electrode and the substrate is
10 mm5 mm, and by supplying a high frequency power of a second frequency
selected from the range between 10 MHz and 30 MHz to a power-supplying electrode
in a deposited film forming vessel wherein the distance between the power-supplying
electrode and the substrate is 20 mm5 mm.
