A semiconductor integrated circuit device has: a layer insulating film formed
on
a semiconductor substrate; a fuse portion which is configured by an uppermost metal
wiring layer that is formed on the layer insulating film; an inorganic insulating
protective film which is formed on the metal wiring layer and the layer insulating
film; and an organic insulating protective film which is formed on the inorganic
insulating protective film. An opening is formed in the organic insulating protective
film so that the inorganic insulating protective on the fuse portion is exposed.
According to this configuration, it is not required to etch away the layer insulating
film in order to form an opening above the fuse portion. Therefore, the time period
required for forming the opening can be shortened and the whole production time
period can be shortened. Since only the inorganic insulating protective film is
formed above the fuse portion, the cutting off of the fuse portion can be performed
without excessively increasing the irradiation energy of a laser beam. Therefore,
high reliability and high productivity can be realized without causing the lowering
of the reliability and the reduction of the production yield which are due to the
cutting off of the fuse portion. Since the fuse portion is covered with the inorganic
insulating protective film, the moisture resistance can be improved.
