The present invention is directed to a copper bath composition and a process
for the electroless and/or electrolytic plating of copper to fill vias and trenches
during the manufacture of integrated circuits. Specifically, the copper bath composition
comprises water, copper ions, hydroxide ions, a complexing agent to inhibit the
formation of copper oxides, copper hydroxides and copper salts, a stabilizer to
control the rate of electroless copper plating, a reducing agent to promote the
electroless reduction of the copper ions to copper metal, and a catalyst to promote
the electrolytic reduction copper ions to copper metal.
