A memory device according to the present invention includes a memory cell array
including a plurality of memory cells arranged therein, the memory cell array being
divided into a plurality of regions each selectable independently of the others
as an object for data writing, and further includes a plurality of current supply
sections provided correspondingly to the plurality of regions, respectively. Each
of the plurality of current supply sections, when a corresponding region of the
plurality of regions is selected as an object for data writing, is activated to
supply a data write current to the corresponding region and each of the plurality
of regions includes a plurality of write select lines provided correspondingly
to predetermined units of the plurality of memory cells. The plurality of write
select lines are selectively supplied with the data write current from a corresponding
one of the plurality of current supply sections.
