A structure and method for a silicon carbide (SiC) gate turn-off (GTO) thyristor
device operable to provide an increased turn-off gain comprises a cathode region,
a drift region having an upper portion and a lower portion, wherein the drift region
overlies the cathode region, a gate region overlying the drift region, an anode
region overlying the gate, and at least one ohmic contact positioned on each of
the gate region, anode region, and cathode region, wherein the upper portion of
the drift region, the gate region, and the anode region have a free carrier lifetime
and mobility lower than a comparable SiC GTO thyristor for providing the device
with an increased turn-off gain, wherein the free carrier lifetime is approximately
10 nanoseconds. The reduced free carrier lifetime and mobility are affected by
altering the growth conditions, such as temperature under which epitaxy occurs.
