A method for fabricating a surface-emission semiconductor laser on a p-type substrate
includes the step of interposing an Au film between an AuGeNi film or AuGe film
of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed
by annealing to form an Au alloy in the n-side electrode. The presence of the Au
alloy film improves the adherence between the n-side electrode and the compound
semiconductor layer to improve an injection current vs. applied voltage characteristic.
