A semiconductor memory device has a first precharge transistor connecting a potential
supply line to one end of a bit line when the bit line is precharged and a second
precharge transistor connecting the potential supply line to the other end of the
bit line when the bit line is precharged. To a gate of the first precharge transistor
is inputted a first precharge signal, and to a gate of the second precharge transistor
is inputted a second precharge signal generated based on a chip-select signal and
the first precharge signal. The second precharge transistor is brought into a cut-off
state during a standby state in which a memory cell corresponding to the second
precharge transistor does not read nor write data but holds date.
