A semiconductor package to which a potential difference is applied has two or
more
of the components thereof bound together using a filler metal. The filler metal
is a solid solution structure in which the metallic components are atomically dispersed,
and may comprise an alloy of gold, silver and copper. A preferred form of the filler
metal comprises 60Au20Ag20Cu. Such filler metals in accordance with the invention
provide the advantages of silver-based filler metals without the silver migration
that leads to eventual shorting of the semiconductor package. When water condenses
to form a continuous layer thereof within the semiconductor package due to moisture
seeping into the package and temperature changes, the silver within the filler
metal does not ionize, and therefore a buildup of silver deposits and eventual
shorting of the package does not occur.
