A reference voltage generating circuit of a non-volatile ferroelectric memory
device
includes a temperature compensating control circuit that increases and outputs
a level of a signal to a reference capacitor node according to an increase in temperature
when a reference control signal is at a high level, a plurality of ferroelectric
capacitors connected in parallel, each of first electrodes of the plurality of
ferroelectric capacitors are commonly connected to a ground voltage terminal and
each of second electrodes of the plurality of ferroelectric capacitors are commonly
connected to the reference capacitor node, and a plurality of switching blocks
controlled by a reference wordline signal, each having drain terminals commonly
connected to the reference capacitor node, source terminals connected to a corresponding bitline.
